N-Channel MOSFET. P2503BDG Datasheet

P2503BDG MOSFET. Datasheet pdf. Equivalent

Part P2503BDG
Description N-Channel MOSFET
Feature P2503BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 25mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P2503BDG
P2503BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 25mΩ @VGS = 10V
ID
12A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
12
10
30
Avalanche Current
IAR 10
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
EAS
EAR
5
0.625
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
32
22
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.9
75
UNITS
°C / W
Ver 1.1
1 2013-3-21



P2503BDG
P2503BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.5 2.5
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
30
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 12A
VDS = 5V, ID = 12A
25 37
18 25
19
DYNAMIC
Input Capacitance
Ciss
790
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
175
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 12A
VDD = 10V,
ID@ 1A, VGS = 10V, RGEN = 6Ω
65
16
2.5
2.1
2.2
7.5
11.8
3.7
4.4
15
21.3
7.4
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF =1A, VGS = 0V
1.3
2.6
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
18.8
17.6
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-21





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