N-Channel MOSFET. P2504BDG Datasheet

P2504BDG MOSFET. Datasheet pdf. Equivalent

Part P2504BDG
Description N-Channel MOSFET
Feature P2504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 25mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P2504BDG
P2504BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 25mΩ @VGS = 10V
ID
32A
TO-252
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
40
V
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
32
20
A
70
Avalanche Current
IAS 17
Avalanche Energy
L = 0.3mH
EAS
44 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
41.6
W
16.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-21



P2504BDG
P2504BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
1.7 1.9 2.5
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
70
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 10A
VGS = 10V, ID = 12A
VDS = 10V, ID = 12A
27 45
21 25
18
DYNAMIC
Input Capacitance
Ciss
760
Output Capacitance
Coss VGS = 0V, VDS = 20V, f = 1MHz
165
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Crss
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 12A
110
16
2.5
2.1
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 20V, RL = 1Ω
ID@ 1A, VGS = 10V, RGEN = 6Ω
1.5 3
2.1 4.2
7.2 14
11.6 21
3.5 7.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF =12A, VGS = 0V
32
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 5A, dlF/dt = 100A / mS
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
14.5
7.2
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
Ω
nS
A
V
nS
nC
Ver 1.1
2 2013-3-21





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