P-Channel MOSFET. P2003ED Datasheet

P2003ED MOSFET. Datasheet pdf. Equivalent

Part P2003ED
Description P-Channel MOSFET
Feature P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
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P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2003ED Datasheet
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P2003ED
P2003ED
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-36A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-36
-23
-100
Avalanche Current
Avalanche Energy2
L = 0.1 mH
IAS
EAS
-32
51
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
17
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2VDD = -15V , Starting TJ = 25 °C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-21



P2003ED
P2003ED
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
-30
-1.0 -1.6 -3.0
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
VDS = -5V, VGS = -10V
-100
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -12A
VGS = -10V, ID = -18A
VDS = -5V, ID = -12A
28 35
17 20
26
DYNAMIC
Input Capacitance
Ciss
1600
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
362
Reverse Transfer Capacitance
Crss
266
Gate Resistance
Rg VGS = 0V, VDS = 0V , f = 1MHZ
3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -18A
VDS = -15V, ID@ -18A,
VGS = -10V, RGEN = 6Ω
28
12
7
6
12
10
36
19
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
-32
-1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -18A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
36
32
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-21





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