N-Channel MOSFET. P2804BDG Datasheet

P2804BDG MOSFET. Datasheet pdf. Equivalent

Part P2804BDG
Description N-Channel MOSFET
Feature P2804BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P2804BDG
P2804BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
25
16
75
Avalanche Current
IAS 26
Avalanche Energy
L = 0.1mH
EAS
34
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4
50
UNITS
°C / W
REV1.2
1 2014/5/30



P2804BDG
P2804BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
123
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
75
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 12A
VGS = 10V, ID = 18A
VDS = 5V, ID = 18A
27 50
15 28
25
DYNAMIC
Input Capacitance
Ciss
814
Output Capacitance
Coss VGS = 0V, VDS = 20V, f = 1MHz
172
Reverse Transfer Capacitance
Crss
121
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 20V, VGS = 10V,
ID = 18A
VDD = 20V,
ID@ 18A, VGS = 10V, RGEN = 6Ω
1.6
17
4
5
4
8
14
4
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Forward Voltage1
VSD IS = 18A, VGS = 0V
1.3
Reverse Recovery Time
trr
23
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
19
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
V
nS
nC
REV1.2
2 2014/5/30





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