| Feature |
P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 29mΩ @VGS = 10V
ID 25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA= 25 °C TA= 70 °C
ID IDM
25 20 75
Avalanche Current
IAS 27
Avalanche Energy2
L=0.1mH
EAS
37
Power Dissipation
TC= 25 °C TC= 70°C
PD
30 20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTAN. |
