P3004BD

P3004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 30mΩ @VGS = 10V ID 29A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM 29 23 80 Avalanche Current IAS 19 Avalanche Energy L = 0.1mH EAS 19 Power Dissipation TC = 25 °C TC = 70 °C PD 42 27 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 100% Rg tested 100% UIS tested UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 62.5 UNITS °C / W Ver 1.0 1 2013-4-11 P3004BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown...