P5002CDG

P5002CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 50mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±16 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 20 13 60 Avalanche Current IAS 6.8 Avalanche Energy L=0.1mH EAS 2.3 Power Dissipation TC= 25 °C TC= 100°C PD 35 14 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 40 3.5 UNITS °C / W REV 1.0 1 2014/5/14 P5002CDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC= 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Vol...