P4404EDG

P4404EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 44mΩ @VGS = -10V ID -20A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS -40 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -20 -16 A -50 Avalanche Current Avalanche Energy2 IAS -18 EAS 48 mJ Power Dissipation TC = 25 °C TC = 100 °C PD 30 W 19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -20V , Starting TJ = 25 °C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 4.1 80 UNITS °C / W Ver 1.1 1 2013-3-22 P4404EDG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL...