P-Channel MOSFET. P3003EDG Datasheet

P3003EDG MOSFET. Datasheet pdf. Equivalent

Part P3003EDG
Description P-Channel MOSFET
Feature P3003EDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 30.
Manufacture UNIKC
Datasheet
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P3003EDG P-Channel Logic Level Enhancement Mode MOSFET PROD P3003EDG Datasheet
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P3003EDG
P3003EDG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
30mΩ @VGS = -10V
ID
-18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
-18
-12
-30
Power Dissipation
TC= 25 °C
TC= 70°C
PD
50
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
70
UNITS
°C / W
REV 1.0
1 2014/5/12



P3003EDG
P3003EDG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS =-24V, VGS = 0V
VDS =-20V, VGS = 0V, TJ = 125°C
VDS = -5V, VGS = -10V
-30
-1 -1.5 -3.0
V
±250 mA
1
mA
10
-30 A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =-5V, ID =-10A
VGS =-10V, ID =-18A
42 52
24 30
Forward Transconductance1
gfs
VDS = -10V, ID = -18A
16 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -10V, f = 1MHz
970
370 pF
Reverse Transfer Capacitance
Crss
180
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS =0.5V(BR)DSS, VGS= -10V,
ID = -18A
28
6
12
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
@VDS =-15V ,ID -10A,
VGS=-10V,RGS=6Ω
20
17
180
Fall Time2
tf
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -5A, dlF/dt = 100A / μS
15.5
7.9
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
40
-18
-1.2
nC
nS
A
V
nS
nC
REV 1.0
2 2014/5/12





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