P-Channel MOSFET. P5504EDG Datasheet

P5504EDG MOSFET. Datasheet pdf. Equivalent

Part P5504EDG
Description P-Channel MOSFET
Feature P5504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
Download P5504EDG Datasheet

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P5504EDG
P5504EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55mΩ @VGS = -10V
ID
-21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-21
-13
-39
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
41
16
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-25



P5504EDG
P5504EDG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-40
-1.5 -2.0 -3.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-96
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -8A
VDS = -10V, ID = -8A
65 94
38 55
11
DYNAMIC
Input Capacitance
Ciss
833
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
198
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -8A
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V,
ID@ -1A, VGS = -10V, RGS = 6Ω
Fall Time2
tf
138
18
3.3
6.8
6.7
9.7
19.8
12.3
13.4
19.4
35.6
22.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = -8A, VGS = 0V
-21
-39
-1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -8A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
17
9
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-25





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