P-Channel MOSFET. P9006EDG Datasheet

P9006EDG MOSFET. Datasheet pdf. Equivalent

Part P9006EDG
Description P-Channel MOSFET
Feature P9006EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
Download P9006EDG Datasheet

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P9006EDG
P9006EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID
-15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-15
-10
-50
Avalanche Current
IAS -25
Avalanche Energy
L = 0.1mH
EAS
31
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
41
16
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-26



P9006EDG
P9006EDG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-60
-1 -1.7 -3
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-50
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -7A
VDS = -10V, ID = -7A
100 135
70 90
9
DYNAMIC
Input Capacitance
Ciss
1130
Output Capacitance
Coss VGS = 0V, VDS = -25V, f = 1MHz
122
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -7A
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V
ID@ -1A, VGS = -10V, RGS = 6Ω
Fall Time2
tf
75
23.1
6.8
3.8
7
10
19
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = -7A, VGS = 0V
-15
-1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -7A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
37
53
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-26





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