N-Channel MOSFET. P5506BDG Datasheet

P5506BDG MOSFET. Datasheet pdf. Equivalent

Part P5506BDG
Description N-Channel MOSFET
Feature P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
Download P5506BDG Datasheet

NIKO-SEM N-Channel Logic Level Enhancement P5506BDG Mode P5506BDG Datasheet
P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P5506BDG Datasheet
Recommendation Recommendation Datasheet P5506BDG Datasheet





P5506BDG
P5506BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 55mΩ @VGS = 10V
ID
22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
22
18
80
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
32
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
55
UNITS
°C / W
Ver 1.1
1 2013-3-25



P5506BDG
P5506BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1.0 1.5 2.5
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
22
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 8A
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
59 75
42 55
14
DYNAMIC
Input Capacitance
Ciss
587
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
80
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 10A
VDD = 30V,
ID@ 1A, VGS = 10V, RGEN = 6Ω
46
12.5
1.8
3.7
11
8
19
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = 1A, VGS = 0V
22
1
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
Ver 1.1
2 2013-3-25





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)