N-Channel MOSFET. P75N02LDG Datasheet

P75N02LDG MOSFET. Datasheet pdf. Equivalent

Part P75N02LDG
Description N-Channel MOSFET
Feature P75N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 5mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P75N02LDG
P75N02LDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 5mΩ @VGS = 10V
ID
75A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
50
170
Avalanche Current
IAS 45
Avalanche Energy
L = 0.1mH
EAS
100
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
54
32.75
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.6
MAXIMUM
2.3
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-13



P75N02LDG
P75N02LDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
25
1 1.5 3
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
75
25
250
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 24A
VDS = 15V, ID = 30A
57
6.6 10
55
DYNAMIC
Input Capacitance
Ciss
1840
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
712
Reverse Transfer Capacitance
Crss
559
Gate Resistance
Rg VDS = 0V, VGS = 15mV,f=1MHz
1.25
Total Gate Charge2
Qg10V)
Qg(4.5V)
55
30
Gate-Source Charge2
Qgs(10V)
Qgs(4.5V)
VDD = 15V, ID = 25A
9.5
8.8
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qgd(10V)
Qgd(4.5V)
td(on)
tr
td(off)
tf
VDS = 15V,
ID @ 30A, VGS = 10V, RG= 2.5Ω
19.5
19
11.5
17
32
7.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
40
1.3
Reverse Recovery Time
trr
37
Peak Reverse Recovery Current IRM(REC)
IF = IS, dlF/dt = 100A / mS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
200
0.043
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
A
mC
Ver 1.1
2 2013-3-13





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