N-Channel MOSFET. PD504BA Datasheet

PD504BA MOSFET. Datasheet pdf. Equivalent

Part PD504BA
Description N-Channel MOSFET
Feature PD504BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 110V 85mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
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PD504BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PD504BA Datasheet
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PD504BA
PD504BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
85mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 110
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
9
35
Avalanche Current
IAS 11
Avalanche Energy
L = 1mH
EAS
60
Peak Diode Recovery dV/dt2
dV/dt
4.1
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
46
18
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.7
50
UNITS
°C / W
Ver 1.0
1 2013-5-29



PD504BA
PD504BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 88V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 15A
VDS = 5V, ID = 15A
110
1.0 1.8 3
±100
1
10
35
67 95
61 85
25
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10 V,
VDS = 55V , ID = 15A
VDS = 55V,
ID @ 15A, VGS = 10V, RGEN = 6Ω
527
68
37
1.5
19
2.7
5.2
13
50
81
76
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / μS
33
35
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
15
1.1
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2013-5-29





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