PD548BA

PD548BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.6mΩ @VGS = 10V ID 85A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 85 54 170 Avalanche Current IAS 38 Avalanche Energy L =0.1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 59 23 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RqJC Junction-to-Ambient RqJA 1Pulse width limited by maximum junction temperature. 2Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 40A. MAXIMUM UNITS 2.1 °C / W 62.5 REV 1.0 1 2013-11-25 PD548BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ =...