PD612BA

PD612BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 47A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 47 30 120 Avalanche Current IAS 22 Avalanche Energy L=0.1mH EAS 24 Power Dissipation TC= 25 °C TC= 100°C PD 34 13 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 3.6 UNITS °C / W REV 1.0 1 2014/5/16 PD612BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ= 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX ST...