PD6A8BA

PD6A8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 6.2mΩ @VGS = 10V ID 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 47 120 Avalanche Current IAS 35 Avalanche Energy L =0.1mH EAS 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 73 29 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 55A. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.7 62.5 UNITS °C / W REV 1.0 1 2014/10/14 PD6A8BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MI...