PD6B2BA

PD6B2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.2mΩ @VGS = 10V ID 63A TO-252 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 63 40 120 Avalanche Current IAS 25 Avalanche Energy L = 0.1mH EAS 31 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A. SYMBOL RqJA RqJC TYPICAL MAXIMUM UNITS 62.5 °C / W 2.6 REV 1.0 1 2017/1/4 PD6B2BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST C...