PD6A4BA

PD6A4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 12mΩ @VGS = 10V ID 35A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 35 22 70 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 32 13 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 1.3 UNITS °C / W REV 1.0 1 2016/12/20 PD6A4BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TY...