P0260AT

P0260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2.8A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 2.8 1.8 3.5 Avalanche Energy EAS 5 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25°C SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.3 °C / W Ver 1.0 1 2012/4/16 P0260AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown V...