Document
P0260AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.4Ω @VGS = 10V
ID 2.8A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
2.8 1.8 3.5
Avalanche Energy
EAS 5
Power Dissipation
TC = 25 °C TC = 100 °C
PD
96 38
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25°C
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 1.3 °C / W
Ver 1.0
1 2012/4/16
P0260AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown V.