P0306BT

P0306BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 3.4mΩ @VGS = 10V ID 162A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2,3 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 162 102 300 Avalanche Current IAS 119 Avalanche Energy L = 0.1mH EAS 708 Power Dissipation TC = 25 °C TC = 100 °C PD 178 71 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is 110A. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 0.7 °C / W 62.5 REV 1.0 1 2017/1/13 P0306BT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL ...