P0806ATX

P0806ATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 8mΩ @VGS = 10V ID 110A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 110 69 300 Avalanche Current IAS 102 Avalanche Energy L = 0.1mH EAS 525 Power Dissipation TC = 25 °C TC = 100 °C PD 166 66 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC RqJA TYPICAL MAXIMUM 0.75 62.5 UNITS °C / W Ver 1.0 1 2012/4/16 P0806ATX N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage ...