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P0903BT Dataheets PDF



Part Number P0903BT
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0903BT DatasheetP0903BT Datasheet (PDF)

P0903BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.7mΩ @VGS = 10V ID 60A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current 1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 0.1mH ID IDM IAS EAS 60 38 240 34 58 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operat.

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P0903BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.7mΩ @VGS = 10V ID 60A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current 1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 0.1mH ID IDM IAS EAS 60 38 240 34 58 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowe. SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.2 °C / W Ver 1.0 1 2012/4/16 P0903BT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Dr.


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