Document
P0903BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.7mΩ @VGS = 10V
ID 60A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current 1, 2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
L = 0.1mH
ID
IDM IAS EAS
60 38 240 34 58
Power Dissipation
TC = 25 °C TC = 100 °C
PD
56 22
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowe.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 2.2 °C / W
Ver 1.0
1 2012/4/16
P0903BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Dr.