P1610AT

P1610AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 110V 16mΩ @VGS = 10V ID 51A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 51 32 150 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.3 62.5 UNITS °C / W REV 1.0 1 2015/8/28 P1610AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC ...