2N7002KDW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX  5Ω@10V  5.3Ω@4.5V   ID 340mA SOT-363  6 5 4 1 2 3 FEATURE z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage VGS Gate-Source voltage 60 V ±20 V ID Drain Current 340 mA PD Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance fromJunction to Ambient 833 ℃ /W www.cj-elec.com 1 H,Aug,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Static Characteristics Drain-Source Breakdown Voltage G...