Signal MOSFET. 2N7002KDW Datasheet


2N7002KDW MOSFET. Datasheet pdf. Equivalent


2N7002KDW


Dual N-Channel Small Signal MOSFET
Elektronische Bauelemente

2N7002KDW
115mA, 60V Dual N-Channel Small Signal MOSFET

FEATURES
 Low on-resistance  Fast switching Speed  Low-voltage drive  Easily designed drive circuits  ESD protected:2000V

RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free

MECHANICAL DATA
 Case: SOT-363  Case Material-UL flammability rating 94V-0  Terminals: Solderable per MIL-STD-202,
Method 208  Weight: 0.006 grams(approx.)
DEVICE MARKING: RK

6 54 D2 G1 S1
S2 G2 D1 1 23

SOT-363
A E L6 5 4
B

F1 2 3 DG

K

C

H J

REF.
A B C D E F

Millimeter
Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10
1.20 1.40
0.15 0.35

REF.
G H J K
L

Millimeter
Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15
8°
0.650 TYP.

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL

Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Reverse Drain Current Pulsed Reverse Drain Current Power Dissipation Operat...



2N7002KDW
Elektronische Bauelemente
2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
FEATURES
Low on-resistance
Fast switching Speed
Low-voltage drive
Easily designed drive circuits
ESD protected:2000V
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
MECHANICAL DATA
Case: SOT-363
Case Material-UL flammability rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Weight: 0.006 grams(approx.)
DEVICE MARKING: RK
6 54
D2 G1 S1
S2 G2 D1
1 23
SOT-363
A
E
L6 5 4
B
F1 2 3
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
0.650 TYP.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Power Dissipation
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDP1
ID
IDRP1
PD
TJ, TSTG
Note:
1. Pw10μS, Duty cycle1%
2. When mounted on a 1x0.75x0.062 inch glass epoxy board
RATING
60
±20
115
800
115
800
225
-55~150
UNIT
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V(BR)DSS
IDSS
IGSS
OFF CHARACTERISTICS
60 -
-
- - 1.0
- - ±10
V VGS=0V, ID =10μA
μA VDS=60V, VGS=0V
μA VDS=0V , VGS=±20V
Gate-Threshold Voltage
Static Drain-Source On Resistance
Forward Transfer Admittance
VGS(TH)
RDS(ON)
gFS*
ON CHARACTERISTICS
1 1.85 2.5
- - 7.5
- - 7.5
80 -
-
V VDS= VGS, ID =250μA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
ms VDS=10V, ID=0.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-off Delay Time
* Pw300μS, Duty cycle1%
http://www.SeCoSGmbH.com/
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
- 25 50
- 10 25
- 3.0 5
SWITCHING CHARACTERISTICS
Td(ON)
- 12 20
Td(OFF) - 20 30
VDS=25V
pF VGS=0V
f=1MHz
nS
VDD=30V, I D=0.2A
RL=150, V Gs=10V, RG=10
Any changes of specification will not be informed individually.
31-Dec-2009 Rev. A
Page 1 of 2

2N7002KDW
Elektronische Bauelemente
CHARACTERISTIC CURVES
2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
http://www.SeCoSGmbH.com/
31-Dec-2009 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2




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