CJS2010

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS2010 V(BR)DSS Dual N-channel MOSFET RDS(on)MAX 9.5mΩ@4.5V 10mΩ@4V 20V 10.5mΩ@3.5V 11.5mΩ@3.1V 13mΩ@2.5V FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package MARKING ID 10A S2010 YY S2010 YY S2010= Device code , YY=Date Code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. TSSOP8 APPLICATION z Battery Protection z Load Switch z Power Management Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Symbol VDS VGS ID IDM RθJA TJ TSTG TL Value 20 ±10 10 36 125 150 -55...