P3506DT

P3506DT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ @VGS = 10V ID -40A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -40 -25 -150 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS -40 80 Power Dissipation TC = 25 °C TC = 100 °C PD 104 41 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD=-30V .Starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.2 40 UNITS °C / W Ver 1.0 1 2013-8-28 P3506DT P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX ...