N-Channel MOSFET
P1610ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ @VGS = 10V
ID 34A
TO-220F
...
Description
P1610ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ @VGS = 10V
ID 34A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
ID IDM
34 21 120
Avalanche Current
IAS 12
Avalanche Energy
L = 1mH EAS 72
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 19
Mounting Torque3
Machine Screw
5 0.49
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W Kgf.cm N.m °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Not suggest using Self-Tapping screw.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.6 62.5
UNITS °C / W
REV 1.0
1 2017/1/22
P1610ATF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 ...
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