P-Channel Enhancement Mode MOSFET
PZ509BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
135mΩ @VGS = -10V
ID -1.2A
SOT-32...
Description
PZ509BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
135mΩ @VGS = -10V
ID -1.2A
SOT-323
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-1.2 -0.9 -5.2
Power Dissipation
TA = 25 °C TA = 70 °C
PD
0.3 0.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM UNITS 360 °C / W
REV 1.0 1 2015/6/8
PZ509BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage ...
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