PW5D8EA

PW5D8EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 300mΩ @VGS = 4.5V ID 0.8A SOT-723 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±10 Continuous Drain Current2 Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 0.8 0.62 2.4 Power Dissipation TA = 25 °C TA= 70 °C PD 0.3 0.2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package. SYMBOL RqJA TYPICAL MAXIMUM UNITS 400 °C / W Rev 1.0 1 2016/9/29 PW5D8EA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ...