PZ558EZ

PZ558EZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3Ω @VGS = 4V ID 0.2A SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±16 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 70 °C ID IDM 0.24 0.17 0.7 Power Dissipation TA = 25 °C TA = 70 °C PD 0.29 0.19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package. SYMBOL RqJA TYPICAL MAXIMUM UNITS 413 °C / W REV 1.0 1 2015/8/17 PZ558EZ Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 100mA ...