PB6C4JU

PB6C4JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 19.5mΩ @VGS = 4.5V ID 7A TDFN 2X3-6 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 7 6 25 Avalanche Current IAS 13 Avalanche Energy3 EAS 8.5 Power Dissipation TA= 25 °C TA= 70°C PD 1.8 1.2 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 68 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2015/11/17 PB6C4JU Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CH...