P1260ETFS

NIKO-SEM N-Channel Enhancement Mode P1260ETF:TO-220F P1260ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ ID 12A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 1 23 1. GATE 2. DRAIN 3. SOURCE LIMITS 600 ±30 12 7.6 48 7.3 264 48 19 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 10mH ,starting TJ = 25°C. MAXIMUM 2.6 62.5 UNITS °C / W °C / W E...