Document
NIKO-SEM
N-Channel Enhancement Mode
PK632BA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.3mΩ
ID 78A
D
G S
D DDD
#1 S S S G
G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Continuous Drain Current
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C TC = 100 °C
Power Dissipation4
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VDS VGS ID IDM ID IAS EAS PD
PD Tj, Tstg
LIMITS 30 ±20 78 49 150 27 22 40 80 36 14 4.6 2.9
-55 to 150
UNITS V V
A
mJ W W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2 Junction-to-Ambient2
t ≦10s Steady-State
RJA RJA
27 48 °C / W
Junction-to-Case
Ste.