P2610ASG

NIKO-SEM N-Channel Enhancement Mode P2610ASG Field Effect Transistor TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100 26mΩ ID 40A D G S 123 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg LIMITS ±20 40 31 120 54 145 89 57 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATING THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1limited by maximum junction temperature. 2limited by package. SYMBOL RθJC RθJA TYPICAL MAXIMUM 1.4 50 UNITS °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage G...