Normally-On Trench Silicon Carbide Power JFET
Normally-On Trench Silicon Carbide Power JFET
Features: - Positive Temperature Coefficient for Ease of Paralleling - Ex...
Description
Normally-On Trench Silicon Carbide Power JFET
Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C - RDS(on) max of 0.055 Ω - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
TO-220
Silicon Carbide
SJDA065R055
Product Summary
BVDS RDS(on)max
650 0.055
V Ω
D(2,4)
G(1)
S(3) Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source Voltage
ID, TC=25 ID, TC=100
IDM tSC PD VGS
TC = 25 °C TC = 100 °C Tj = 25 °C VDD < 800 V, TC < 125 °C TC = 25 °C
AC(2)
Operating and Storage Temperature
Tj, Tstg
Lead Temperature for Soldering
Tsold
(1) Pulse width limited by maximum junction temperature
(2) Rg(EXT) = 1 Ω, tp < 200 ns, see Figure 6 for static conditions
1...
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