SJDP120R085

Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C - RDS(on) typical of 0.075 Ω - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance 4 Product Summary BVDS RDS(ON)max ETS,typ 1200 0.085 290 V Ω µJ D(2,4) G(1) Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-247 3 2 1 S(3) Internal Schematic MAXIMUM RATINGS Parameter Symbol Conditions Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source Voltage ID, TC=25 ID, TC=100 IDM tSC PD VGS TC = 25 °C TC = 100 °C Tj = 25 °C VDD < 800 V, Tj < 125 °C TC = 25 °C AC(2) Operating and Storage Temperature Tj, Tstg Lead Temperature for Soldering Tsold (1) Pulse width limited by maximum junction temperature (2) Rg(EXT) = 1 Ω, tp < 200 ns, ...