SJEP120R063

PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - RDS(on)max of 0.063 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1200 V RDS(ON)max 0.063 Ω ETS,typ 440 µJ D(2,4) G(1) Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-247 3 2 1 S(3) Internal Schematic MAXIMUM RATINGS Parameter Symbol Conditions Continuous Drain Current ID, Tj=125 ID, Tj=150 Pulsed Drain Current (1) IDM Short Circuit Withstand Time tSC Power Dissipation PD Gate-Source Voltage VGS Operating and Storage Temperature Tj, Tstg Lead Temperature for Soldering Tsold (1) Limited by pulse width (2) RgEXT = 0.5 Ω, tp < 200 ns, see Figure 6 for sta...