Power JFET. SJEP120R063 Datasheet

SJEP120R063 JFET. Datasheet pdf. Equivalent

Part SJEP120R063
Description Normally-OFF Trench Silicon Carbide Power JFET
Feature PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: .
Manufacture SemiSouth
Datasheet
Download SJEP120R063 Datasheet

PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trenc SJEP120R063 Datasheet
Recommendation Recommendation Datasheet SJEP120R063 Datasheet




SJEP120R063
PRELIMINARY
Silicon Carbide
SJEP120R063
Normally-OFF Trench Silicon Carbide Power JFET
Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 150 °C Maximum Operating Temperature
- RDS(on)max of 0.063
- Voltage Controlled
- Low Gate Charge
4
- Low Intrinsic Capacitance
Product Summary
BVDS
1200
V
RDS(ON)max
0.063
ETS,typ
440
µJ
D(2,4)
G(1)
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
TO-247
3
2
1
S(3)
Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
ID, Tj=125
ID, Tj=150
Pulsed Drain Current (1)
IDM
Short Circuit Withstand Time
tSC
Power Dissipation
PD
Gate-Source Voltage
VGS
Operating and Storage Temperature
Tj, Tstg
Lead Temperature for Soldering
Tsold
(1) Limited by pulse width
(2) RgEXT = 0.5 Ω, tp < 200 ns, see Figure 6 for static conditions
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
VDD < 800 V, TC < 125 °C
TC = 25 °C
AC(2)
1/8" from case < 10 s
Value
30
20
60
50
250
-15 to +15
-55 to +150
260
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
Symbol
Rth JC
Rth JA
Value
Typ Max
- 0.6
- 50
Unit
A
A
µs
W
V
°C
°C
Unit
°C / W
SJEP120R063 Rev1.5
1/8
January 2012



SJEP120R063
PRELIMINARY
Silicon Carbide
SJEP120R063
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Off Characteristics
Drain-Source Blocking Voltage
Total Drain Leakage Current
Total Gate Reverse Leakage
On Characteristics
Drain-Source On-resistance
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related
Switching Characteristics
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BVDS
IDSS
IGSS
VGS = 0 V, ID = 1200 µA
VDS = 1200 V, VGS = 0 V, Tj = 25oC
VDS = 1200 V, VGS = 0 V, Tj = 150oC
VDS = 1200 V, VGS < -15 V,
Tj = 25oC
VDS = 1200 V, VGS < -15 V,
Tj = 150oC
VGS = -15 V, VDS = 0 V
VGS = -15 V, VDS = 1200 V
RDS(on)
VGS(th)
IGFWD
RG
RG(ON)
ID = 20 A, VGS = 3 V,
Tj = 25 °C
ID = 20 A, VGS = 3 V,
Tj = 100 °C
VDS = 1 V, ID = 70 mA
VGS = 3 V
f = 1 MHz, drain-source shorted
VGS >2.7 V; See Figure 6
Ciss
Coss
Crss
Co(er)
VDD = 100 V
VDS = 0 V to 600 V,
VGS = 0 V
ton VDS = 600 V, ID = 24 A,
tr Inductive Load, Tj = 25oC
toff Gate Driver = SGDR600P1,
tf GD Voltages: +15 V, -15 V
Eon
Eoff See Figure 16 and application note for
Ets gate drive recommendations
ton VDS = 600 V, ID = 24 A,
tr Inductive Load, Tj = 150oC
toff Gate Driver = SGDR600P1,
tf GD Voltages: +15 V, -15 V
Eon
Eoff See Figure 16 and application note for
Ets gate drive recommendations
Qg
Qgs
Qgd
VDS = 600 V, ID = 10 A,
VGS = + 2.5 V
Min
1200
-
-
-
-
-
-
-
-
0.75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
Typ
-
200
600
2
20
-0.2
-0.2
0.04
0.09
1.00
440
4
0.25
1220
180
169
100
15
12
35
30
131
222
353
15
15
35
30
145
229
374
60
2
49
Max
-
1200
-
-
-
-0.6
-
0.063
-
1.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
mA
V
mA
pF
ns
uJ
ns
uJ
nC
SJEP120R063 Rev1.5
2/8
January 2012





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)