MOSFET. RJU002N06FRA Datasheet

RJU002N06FRA MOSFET. Datasheet pdf. Equivalent

Part RJU002N06FRA
Description MOSFET
Feature 2.5V Drive Nch MOSFET RRJJUU002N06FRA AEC-Q101 Qualified zStructure Silicon N-channel MOS FET zFe.
Manufacture ROHM
Datasheet
Download RJU002N06FRA Datasheet

2.5V Drive Nch MOSFET RRJJUU002N06FRA AEC-Q101 Qualified z RJU002N06FRA Datasheet
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RJU002N06FRA
2.5V Drive Nch MOSFET
RRJJUU002N06FRA
AEC-Q101 Qualified
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000022NN0066FRA
Taping
T106
3000
zDimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2) (1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : ML
zInner circuit
(3)
(2) 2
1
1 ESD PROTECTION DIODE (1)
2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP 1
PD 2
Tch
Tstg
Limits
60
±12
±200
±800
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
625
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
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c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2016.05 - Rev.B



RJU002N06FRA
RJJUU000022NN0066FRA
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
60
0.5
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
0.1
Typ.
1.6
1.7
2.2
18
7
5
7
7
12
90
Max.
±10
1
1.5
2.3
2.4
3.1
Unit Conditions
µA VGS=±12V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 60V, VGS=0V
V VDS= 10V, ID= 1mA
ID= 200mA, VGS= 4.5V
ID= 200mA, VGS= 4V
ID= 200mA, VGS= 2.5V
S VDS= 10V, ID= 200mA
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 30V
ns
ns
ID= 100mA
VGS= 4V
RL=300
ns RG=10
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD − − 1.2 V
Conditions
IS= 0.16A, VGS=0V
Data Sheet
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c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2016.05 - Rev.B





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