MOSFET. RSD046P05FRA Datasheet

RSD046P05FRA MOSFET. Datasheet pdf. Equivalent

Part RSD046P05FRA
Description MOSFET
Feature RSD046P05FRA Pch 45V 4.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 45V 155m 4.5A 15W .
Manufacture ROHM
Datasheet
Download RSD046P05FRA Datasheet

RSD046P05FRA Pch 45V 4.5A Power MOSFET Datasheet VDSS RDS( RSD046P05FRA Datasheet
Recommendation Recommendation Datasheet RSD046P05FRA Datasheet




RSD046P05FRA
RSD046P05FRA
Pch 45V 4.5A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
45V
155m
4.5A
15W
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Application
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Absolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Tc = 25°C
Ta = 25°C
Range of storage temperature
Outline
AEC-Q101 Qualified
CPT3
(SC-63)
<SOT-428>
(1) (2)
(3)
Inner circuit
1
2
(1) Gate
(2) Drain
(3) Source
1 ESD PROTECTION DIODE
(1) (2) (3) 2 BODY DIODE
Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
330
16
2,500
TL
046P05
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
45
4.5
2.4
9.0
20
14.3
4.5
15
0.85
150
55 to 150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
2015.11 - Rev.C



RSD046P05FRA
RSD046P05FRA
Thermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJC
Values
Min. Typ. Max.
- - 8.33
Unit
°C/W
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
VDS = 45V, VGS = 0V
Zero gate voltage drain current
Tj = 25°C
IDSS
VDS = 45V, VGS = 0V
Tj = 125°C
Gate - Source leakage current
IGSS VGS = 20V, VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 4.5A
Static drain - source
on - state resistance
VGS = 4.5V, ID = 4.5A
RDS(on) *4 VGS = 4.0V, ID = 4.5A
VGS = 10V, ID = 4.5A
Tj = 125°C
Forward transfer admittance
gfs VDS = 10V, ID =4.5A
Min.
45
-
-
-
1
-
-
-
-
3
Values
Typ. Max.
--
- 1
- 100
- 10
- 3
110 155
160 225
185 260
180 250
6-
Unit
V
A
A
V
m
S
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/12
2015.11 - Rev.C





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