MOSFET. RSD050N10FRA Datasheet

RSD050N10FRA MOSFET. Datasheet pdf. Equivalent

Part RSD050N10FRA
Description MOSFET
Feature 4V Drive Nch MOSFET RSD050N10FRA Structure Silicon N-channel MOSFET Features 1) Low on-resistance..
Manufacture ROHM
Datasheet
Download RSD050N10FRA Datasheet

4V Drive Nch MOSFET RSD050N10FRA Structure Silicon N-channe RSD050N10FRA Datasheet
Recommendation Recommendation Datasheet RSD050N10FRA Datasheet




RSD050N10FRA
4V Drive Nch MOSFET
RSD050N10FRA
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
3) Parallel use is easy.
Applications
Switching
AEC-Q101 Qualified
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
CPT3
TL
2500
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
100
20
5.0
20
5.0
20
15
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Tc=25°C
Unit
V
V
A
A
A
A
W
°C
°C
Inner circuit
1
(1) Gate
(2) Drain
(3) Source
2
*1 ESD Protection Diode
*2 Body Diode
(1) (2) (3)
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
8.33
Unit
°C / W
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©2012 ROHM Co., Ltd. All rights reserved.
1/6
2012.02 - Rev.B



RSD050N10FRA
RSD050N10FRAFRA
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
100
-
1.0
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
135
142
145
-
530
50
30
10
15
45
15
14
1.7
3.0
Max.
±10
-
10
2.5
190
200
205
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=100V, VGS=0V
V VDS=10V, ID=1mA
ID=5.0A, VGS=10V
mID=5.0A, VGS=4.5V
ID=5.0A, VGS=4.0V
S ID=5.0A, VDS=10V
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 50V
ns VGS=10V
ns RL=20
ns RG=10
nC VDD 50V
nC ID=5.0A,
nC VGS=10V
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=5.0A, VGS=0V
DataSheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.02 - Rev.B





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