Document
4V Drive Pch MOSFET
RRSSDD008800PP0055FRA
Structure Silicon P-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
Application Switching
Data Sheet
AEC-Q101 Qualified
Dimensions (Unit : mm)
CPT3
(SC-63)
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RRSSDD008800PP050F5RA
Taping TL
2500 ○
Inner circuit
∗1 ∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature Range of storage temperature
VDSS
VGSS
ID IDP *1 IS ISP *1 PD *2
Tch Tstg
45 20 8.0 16 8.0 16 15 150 55 to 150
*1 Pw≦10s, Duty cycle≦1%
*2 Tc=25C
Unit V V A A A A W C C
(1) Gate (2) Drain (3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE 2 BODY DIODE
Therma.