MOSFET. RSD175N10 Datasheet

RSD175N10 MOSFET. Datasheet pdf. Equivalent

Part RSD175N10
Description MOSFET
Feature Data Sheet 4V Drive Nch MOSFET RSD175N10  Structure Silicon N-channel MOSFET Features 1) Low on-r.
Manufacture ROHM
Datasheet
Download RSD175N10 Datasheet

Data Sheet 4V Drive Nch MOSFET RSD175N10  Structure Silico RSD175N10 Datasheet
RSD175N10FRA    Nch 100V 17.5A Power MOSFET    Datasheet V RSD175N10FRA Datasheet
Recommendation Recommendation Datasheet RSD175N10 Datasheet




RSD175N10
Data Sheet
4V Drive Nch MOSFET
RSD175N10
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
4) 4V drive.
4) High power package.
Application
Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
0.5
1.0
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSD175N10
Taping
TL
2500
Inner circuit
1
2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
PD *2
Tch
Range of storage temperature
Tstg
Limits
100
20
17.5
35
17.5
35
20
150
55 to 150
*1 PW10s, Duty cycle1%
*2 TC=25°C
*3 Please use within the range of SOA.
Unit
V
V
A
A
A
A
W
C
C
Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol
Rth (ch-c)*
Limits
6.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A



RSD175N10
RSD175N10
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
100
-
1
-
-
-
5
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
75
80
85
-
950
85
55
10
25
60
50
24
3
6
Max.
10
-
1
2.5
105
112
119
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=100V, VGS=0V
V VDS=10V, ID=1mA
ID=8.8A, VGS=10V
mID=8.8A, VGS=4.5V
ID=8.8A, VGS=4V
S VDS=10V, ID=8.8A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 50V, ID=8.8A
ns VGS=10V
ns RL=5.7
ns RG=10
nC VDD 50V, ID=17.5A
nC VGS=10V
nC
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Min.
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5 V Is=17.5A, VGS=0V
Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.06 - Rev.A





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