RSD175N10

Data Sheet 4V Drive Nch MOSFET RSD175N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 4) 4V drive. 4) High power package.  Application Switching  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0 1.5 9.5  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD175N10 Taping TL 2500   Inner circuit ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch Range of storage temperature Tstg Limits 100 20 17.5 35 17.5 35 20 150 55 to 150 *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA. Unit V V A A A A W C C  Thermal resistance Parameter Channel to Case * T...