MOSFET. RSD201N10 Datasheet

RSD201N10 MOSFET. Datasheet pdf. Equivalent

Part RSD201N10
Description MOSFET
Feature RSD201N10 Nch 100V 20A Power MOSFET RSD201N10 Datasheet VDSS RDS(on) (Max.) ID PD 100V 46mW 20A 2.
Manufacture ROHM
Datasheet
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RSD201N10
RSD201N10
Nch 100V 20A Power MOSFET
RSD201N10
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
100V
46mW
20A
20W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C *4
Junction temperature
Range of storage temperature
lOutline
CPT3
(SC-63)
<SOT-428>
(3)
(2)
(1)
lInner circuit
(1) Gate
(2) Drain
(3) Source
(1)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
(3)
*1
*2
(2)
Taping
330
16
2,500
TL
201N10
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
100
20
10
80
20
14.6
10
20
0.85
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2012.08 - Rev.A



RSD201N10
RSD201N10
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 6.25 °C/W
- - 147 °C/W
- - 265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
VDS = 100V, VGS = 0V
Zero gate voltage drain current
Tj = 25°C
IDSS
VDS = 100V, VGS = 0V
Tj = 125°C
Gate - Source leakage current
IGSS VGS = 20V, VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 20A
Static drain - source
on - state resistance
RDS(on) *5 VGS = 4.0V, ID = 20A
VGS = 10V, ID = 20A
Tj = 125°C
Forward transfer admittance
gfs VDS = 10V, ID = 20A
Values
Min. Typ. Max.
100 -
-
- -1
- - 100
- - 10
1.0 - 2.5
- 33 46
- 36 50
- 60 84
15 30
-
Unit
V
mA
mA
V
mW
S
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/12
2012.08 - Rev.A





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