RSJ400N06FRA

10V Drive Nch MOSFET RRSSJJ440000NN0066FRA  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High current 3) High power Package  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RRSSJJ4400N0N060F6RA Taping TL 1000  Data Sheet AEC-Q101 Qualified  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 13.1 9.0 1.0 3.0 1.24 2.54 0.78 5.08 (1) (2) (3) 0.4 2.7 1.2  Inner circuit ∗1 ∗2 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch 60 20 40 80 40 80 50 150 Range of storage temperature Tstg 55to150 *1 Pw10s, Duty cycle1% *2 Tc=25C Unit V V A A A A W C C (1) Gate (2) Drain (3) Source  Thermal resistance Parameter Channel to Case * Tc=25...