MOSFET
4V Drive Nch MOSFET
RSJ550N10
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High Power Package...
Description
4V Drive Nch MOSFET
RSJ550N10
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive.
Data Sheet
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
13.1 9.0
1.0
3.0
1.24
2.54 0.78 5.08
(1) (2) (3)
0.4 2.7
1.2
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RSJ550N10
Taping TL
1000
Inner circuit
∗1 ∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch Tstg
100 20 55 110 55 110 100 150 55 to 150
*1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.
Unit V V A A A A W C C
Thermal resistance Parameter
Channel to Case
* TC=25°C
Symbol Rth (ch-c)*
Li...
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