MOSFET. RSD131P10FRA Datasheet

RSD131P10FRA MOSFET. Datasheet pdf. Equivalent

Part RSD131P10FRA
Description MOSFET
Feature RSD131P10FRA Pch 100V 13A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 100V 200m: 13A 20W .
Manufacture ROHM
Datasheet
Download RSD131P10FRA Datasheet

RSD131P10FRA Pch 100V 13A Power MOSFET Datasheet VDSS RDS( RSD131P10FRA Datasheet
Recommendation Recommendation Datasheet RSD131P10FRA Datasheet




RSD131P10FRA
RSD131P10FRA
Pch 100V 13A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
100V
200m:
13A
20W
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
zApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
zAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C
Junction temperature
Range of storage temperature
zOutline
AEC-Q101 Qualified
CPT3
(SC-63)
<SOT-428>
(1) (2)
(3)
zInner circuit
1
2
(1) Gate
(2) Drain
(3) Source
1 ESD PROTECTION DIODE
(1) (2) (3) 2 BODY DIODE
zPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
330
16
2,500
TL
131P10
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
100
r13
r7.0
r52
r20
11.9
13
20
0.85
150
55 to 150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
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© 201 ROHM Co., Ltd. All rights reserved.
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2021051.51.111- -RReevv.C.E



RSD131P10FRA
RSD131P10FRA
zThermal resistance
Parameter
Thermal resistance, junction - caamsbeient
Data Sheet
Symbol
RthJC
Values
Min. Typ. Max.
- - 6.25
Unit
°C/W
zElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
100
-
-
Zero gate voltage drain current
VDS = 100V, VGS = 0V
Tj = 25°C
IDSS
VDS = 100V, VGS = 0V
Tj = 125°C
-
-
- 1
- 100
Gate - Source leakage current
IGSS VGS = r20V, VDS = 0V
-
- r10
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA 1
- 2.5
VGS = 10V, ID = 6.5A -
135 200
Static drain - source
on - state resistance
VGS = 4.5V, ID = 6.5A
RDS(on) *4 VGS = 4.0V, ID = 6.5A
VGS = 10V, ID = 13A
Tj = 125°C
-
-
-
150 220
155 230
250 350
Forward transfer admittance
gfs VDS = 10V, ID = 13A 10
20
-
Unit
V
PA
PA
V
m:
S
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© 201 ROHM Co., Ltd. All rights reserved.
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2021051.51.111- -RReevv.C.E





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