Power MOSFET
RSD175N10FRA
Nch 100V 17.5A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
100V 105mΩ ±17.5A
20W
lFeatures
1)...
Description
RSD175N10FRA
Nch 100V 17.5A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
100V 105mΩ ±17.5A
20W
lFeatures
1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified
lOutline
TO-252
SC-63
CPT3
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Basic ordering unit (pcs)
16 2500
Taping code
TL
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
175N10
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
100 V
Continuous drain current
ID*1
±17.5
A
Pulsed drain current
IDP*2 ±35 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*3 20 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/11
20170706 - Rev.001
RSD175N10FRA
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol RthJC*3
Values Min. Typ. Max.
- - 6.25
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature ...
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